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onsemi FDD1600N10ALZD — Discrete Semiconductors

onsemi FDD1600N10ALZD

MPNFDD1600N10ALZD
Obsolete
$0.9800Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDD1600N10ALZD specifications
ParameterValue
SeriesPowerTrench®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C6.8A (Tc)
Power dissipation14.9W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-5, DPak (4 Leads + Tab), TO-252AD
Vgs(th) (Max) @ id2.8V @ 250µA
Rds on (Max) @ id, vgs160mOhm @ 3.4A, 10V
Gate charge (Qg) (Max) @ vgs3.61 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds225 pF @ 50 V