FDD1600N10ALZ

onsemi · PowerTrench® Series

MOSFET N-CH 100V 6.8A TO252

onsemi FDD1600N10ALZ
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

FDD1600N10ALZ specifications
Parameter / AttributeSpecification / Value
SeriesPowerTrench®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C6.8A (Tc)
Power dissipation14.9W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.8V @ 250µA
Rds on (Max) @ id, vgs160mOhm @ 3.4A, 10V
Gate charge (Qg) (Max) @ vgs3.61 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds225 pF @ 50 V
FDD1600N10ALZ
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