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onsemi FDD10N20LZTM — Discrete Semiconductors

onsemi FDD10N20LZTM

MPNFDD10N20LZTM
Obsolete
$0.4300Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDD10N20LZTM specifications
ParameterValue
SeriesUniFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C7.6A (Tc)
Power dissipation83W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs360mOhm @ 3.8A, 10V
Gate charge (Qg) (Max) @ vgs16 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds585 pF @ 25 V