onsemi FDC658P
MPNFDC658P
Active
MOSFET P-CH 30V 4A SUPERSOT6
$0.5700Ref. price · indicative, final on quote
PackagingSOT-23-6 Thin, TSOT-23-6
RoHSROHS3 Compliant
SeriesPowerTrench®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | PowerTrench® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 4A (Ta) |
| Power dissipation | 1.6W (Ta) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | SOT-23-6 Thin, TSOT-23-6 |
| Vgs(th) (Max) @ id | 3V @ 250µA |
| Rds on (Max) @ id, vgs | 50mOhm @ 4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 12 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 750 pF @ 15 V |