FDC658AP

onsemi

onsemi FDC658AP
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[IN STOCK] In Stock: 5,277 pcs
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MOQ 5 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

FDC658AP specifications
Parameter / AttributeSpecification / Value
SeriesPowerTrench®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C4A (Ta)
Power dissipation1.6W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs50mOhm @ 4A, 10V
Gate charge (Qg) (Max) @ vgs8.1 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds470 pF @ 15 V
FDC658AP
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