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FDC655AN

onsemi FDC655AN

MPNFDC655AN
Obsolete
$1.9300Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDC655AN specifications
ParameterValue
SeriesPowerTrench®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C6.3A (Ta)
Power dissipation1.6W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs27mOhm @ 6.3A, 10V
Gate charge (Qg) (Max) @ vgs13 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds830 pF @ 15 V