onsemi FDC645N
MPNFDC645N
Active
MOSFET N-CH 30V 5.5A SUPERSOT6
$0.6000Ref. price · indicative, final on quote
PackagingSOT-23-6 Thin, TSOT-23-6
RoHSROHS3 Compliant
SeriesPowerTrench®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | PowerTrench® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 5.5A (Ta) |
| Power dissipation | 1.6W (Ta) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Case | SOT-23-6 Thin, TSOT-23-6 |
| Vgs(th) (Max) @ id | 2V @ 250µA |
| Rds on (Max) @ id, vgs | 26mOhm @ 6.2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 21 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 1460 pF @ 15 V |