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onsemi FDC642P-F085P — Discrete Semiconductors

onsemi FDC642P-F085P

MPNFDC642P-F085P
Obsolete
$0.4600Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDC642P-F085P specifications
ParameterValue
SeriesPowerTrench®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C4A (Ta)
Power dissipation1.2W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs65mOhm @ 4A, 4.5V
Gate charge (Qg) (Max) @ vgs9 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds630 pF @ 10 V