FDC642P
onsemi FDC642P
MPNFDC642P
Active
MOSFET P-CH 20V 4A SUPERSOT6
$0.6300Ref. price · indicative, final on quote
PackagingSOT-23-6 Thin, TSOT-23-6
RoHSROHS3 Compliant
SeriesPowerTrench®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | PowerTrench® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 4A (Ta) |
| Power dissipation | 1.6W (Ta) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Case | SOT-23-6 Thin, TSOT-23-6 |
| Vgs(th) (Max) @ id | 1.5V @ 250µA |
| Rds on (Max) @ id, vgs | 65mOhm @ 4A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 16 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 925 pF @ 10 V |