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onsemi FDC640P_F095 — Discrete Semiconductors

onsemi FDC640P_F095

MPNFDC640P_F095
Obsolete
$0.5800Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDC640P_F095 specifications
ParameterValue
SeriesPowerTrench®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C4.5A (Ta)
Power dissipation1.6W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs53mOhm @ 4.5A, 4.5V
Gate charge (Qg) (Max) @ vgs13 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds890 pF @ 10 V