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onsemi FDC6401N — Discrete Semiconductors

onsemi FDC6401N

MPNFDC6401N
Active

MOSFET 2N-CH 20V 3A SSOT6

$0.6500Ref. price · indicative, final on quote
PackagingSOT-23-6 Thin, TSOT-23-6
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

FDC6401N Technical Specifications
ParameterValue
SeriesPowerTrench®
Mounting typeSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C3A
Power - max700mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs70mOhm @ 3A, 4.5V
Gate charge (Qg) (Max) @ vgs4.6nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds324pF @ 10V