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onsemi FDC6392S — Discrete Semiconductors

onsemi FDC6392S

MPNFDC6392S
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDC6392S specifications
ParameterValue
SeriesPowerTrench®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C2.2A (Ta)
Power dissipation960mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
FET featureSchottky Diode (Isolated)
CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs150mOhm @ 2.2A, 4.5V
Gate charge (Qg) (Max) @ vgs5.2 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds369 pF @ 10 V