FDC637AN

onsemi · PowerTrench® Series

MOSFET N-CH 20V 6.2A SUPERSOT6

onsemi FDC637AN
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[IN STOCK] In Stock: 65 pcs
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MOQ 5 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

FDC637AN specifications
Parameter / AttributeSpecification / Value
SeriesPowerTrench®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C6.2A (Ta)
Power dissipation1.6W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs24mOhm @ 6.2A, 4.5V
Gate charge (Qg) (Max) @ vgs16 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1125 pF @ 10 V
FDC637AN
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