Skip to main content
FDC633N_F095

onsemi FDC633N_F095

MPNFDC633N_F095
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDC633N_F095 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C5.2A (Ta)
Power dissipation1.6W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs42mOhm @ 5.2A, 4.5V
Gate charge (Qg) (Max) @ vgs16 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds538 pF @ 10 V