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FDC6312P

onsemi FDC6312P

MPNFDC6312P
Active
$0.7100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDC6312P specifications
ParameterValue
SeriesPowerTrench®
FET type2 P-Channel (Dual)
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C2.3A
Power - max700mW
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs115mOhm @ 2.3A, 4.5V
Gate charge (Qg) (Max) @ vgs7nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds467pF @ 10V