Skip to main content
onsemi FDC6303N — Discrete Semiconductors

onsemi FDC6303N

MPNFDC6303N
Active

MOSFET 2N-CH 25V 0.68A SSOT6

$0.4600Ref. price · indicative, final on quote
PackagingSOT-23-6 Thin, TSOT-23-6
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDC6303N specifications
ParameterValue
MountingSurface Mount
Drain to source voltage25V
Current - continuous drain (Id) @ 25°C680mA
Power - max700mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 N-Channel (Dual)
CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs450mOhm @ 500mA, 4.5V
Gate charge (Qg) (Max) @ vgs2.3nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds50pF @ 10V