FDC6303N

onsemi

MOSFET 2N-CH 25V 0.68A SSOT6

onsemi FDC6303N
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[IN STOCK] In Stock: 685 pcs
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

FDC6303N specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Drain to source voltage25V
Current - continuous drain (Id) @ 25°C680mA
Power - max700mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 N-Channel (Dual)
CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs450mOhm @ 500mA, 4.5V
Gate charge (Qg) (Max) @ vgs2.3nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds50pF @ 10V
FDC6303N
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