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onsemi FDC606P — Discrete Semiconductors

onsemi FDC606P

MPNFDC606P
Active

MOSFET P-CH 12V 6A SUPERSOT6

$0.8800Ref. price · indicative, final on quote
PackagingSOT-23-6 Thin, TSOT-23-6
RoHSROHS3 Compliant
SeriesPowerTrench®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDC606P specifications
ParameterValue
SeriesPowerTrench®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage12 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C6A (Ta)
Power dissipation1.6W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs26mOhm @ 6A, 4.5V
Gate charge (Qg) (Max) @ vgs25 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1699 pF @ 6 V