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onsemi FDC30N20DZ — Discrete Semiconductors

onsemi FDC30N20DZ

MPNFDC30N20DZ
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDC30N20DZ specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C4.6A (Ta)
Power dissipation960mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs31mOhm @ 4.6A, 10V
Gate charge (Qg) (Max) @ vgs7.9 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds535 pF @ 15 V