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FDC021N30

onsemi FDC021N30

MPNFDC021N30
Obsolete
$1.6300Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDC021N30 specifications
ParameterValue
SeriesPowerTrench®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C6.1A (Ta)
Power dissipation700mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs26mOhm @ 6.1A, 10V
Gate charge (Qg) (Max) @ vgs10.8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds710 pF @ 15 V