onsemi FDA16N50-F109
MPNFDA16N50-F109
End of Life
POWER FIELD-EFFECT TRANSISTOR, 1
$1.51Ref. price · indicative, final on quote
PackagingTO-3P-3, SC-65-3
SeriesUniFET™
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | UniFET™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 500 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 16.5A (Tc) |
| Power dissipation | 205W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-3P-3, SC-65-3 |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 380mOhm @ 8.3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 45 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1945 pF @ 25 V |