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onsemi FCP9N60N-F102

onsemi FCP9N60N-F102

MPNFCP9N60N-F102
End of Life

POWER MOSFET, N-CHANNEL, SUPREMO

$1.38Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FCP9N60N-F102 specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation83.3W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs385mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs29 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1240 pF @ 100 V