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onsemi FCMT299N60

onsemi FCMT299N60

MPNFCMT299N60
End of Life

MOSFET N-CH 600V 12A POWER88

$3.07Ref. price · indicative, final on quote
Packaging4-PowerTSFN
RoHSROHS3 Compliant
SeriesSuperFET® II
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FCMT299N60 specifications
ParameterValue
SeriesSuperFET® II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C12A (Ta)
Power dissipation125W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case4-PowerTSFN
Vgs(th) (Max) @ id3.5V @ 250µA
Rds on (Max) @ id, vgs299mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs51 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1948 pF @ 380 V