onsemi FCMT199N60
MPNFCMT199N60
End of Life
MOSFET N-CH 600V 20.2A POWER88
$3.74Ref. price · indicative, final on quote
Packaging4-PowerTSFN
RoHSROHS3 Compliant
SeriesSuperFET® II
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | SuperFET® II |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 20.2A (Tc) |
| Power dissipation | 208W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 4-PowerTSFN |
| Vgs(th) (Max) @ id | 3.5V @ 250µA |
| Rds on (Max) @ id, vgs | 199mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 74 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2950 pF @ 100 V |