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onsemi FCH041N65EFL4

onsemi FCH041N65EFL4

MPNFCH041N65EFL4
End of Life

POWER FIELD-EFFECT TRANSISTOR, N

$7.45Ref. price · indicative, final on quote
PackagingTO-247-4
SeriesFRFET®, SuperFET® II
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FCH041N65EFL4 specifications
ParameterValue
SeriesFRFET®, SuperFET® II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C76A (Tc)
Power dissipation595W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-4
Vgs(th) (Max) @ id5V @ 7.6mA
Rds on (Max) @ id, vgs41mOhm @ 38A, 10V
Gate charge (Qg) (Max) @ vgs298 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds12560 pF @ 100 V