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onsemi DTC123JET1G — Discrete Semiconductors

onsemi DTC123JET1G

MPNDTC123JET1G
Active

TRANS PREBIAS NPN 50V 100MA SC75

$0.1600Ref. price · indicative, final on quote
PackagingSC-75, SOT-416
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DTC123JET1G specifications
ParameterValue
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce80 @ 5mA, 10V
Power - max200 mW
PackageTape & Reel (TR) Cut Tape (CT)
CaseSC-75, SOT-416
Resistor - base (R1)2.2 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic250mV @ 1mA, 10mA