Skip to main content
onsemi DTC115EET1G — Discrete Semiconductors

onsemi DTC115EET1G

MPNDTC115EET1G
Active
$0.2100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DTC115EET1G specifications
ParameterValue
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce80 @ 5mA, 10V
Power - max200 mW
PackageTape & Reel (TR); Cut Tape (CT)
CaseSC-75, SOT-416
Resistor - base (R1)100 kOhms
Resistor - emitter base (R2)100 kOhms
Vce saturation (Max) @ ib, ic250mV @ 300µA, 10mA