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onsemi BYW51-200G — Discrete Semiconductors

onsemi BYW51-200G

MPNBYW51-200G
Active
$1.6700Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BYW51-200G specifications
ParameterValue
SeriesSWITCHMODE™
MountingThrough Hole
Voltage - DC reverse (Vr)200 V
Voltage - forward (Vf) (Max) @ if970 mV @ 8 A
Current - reverse leakage @ vr10 µA @ 200 V
Current - average rectified (Io) (per diode)8A
Operating temperature - junction-65°C ~ 175°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologyStandard
CaseTO-220-3
Diode configuration1 Pair Common Cathode
Reverse recovery time35 ns