BVSS84LT1G

onsemi

MOSFET P-CH 50V 130MA SOT23-3

onsemi BVSS84LT1G
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[IN STOCK] In Stock: 932 pcs
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

BVSS84LT1G specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage50 V
Drive voltage (Max rds on, min rds on)5V
Current - continuous drain (Id) @ 25°C130mA (Ta)
Power dissipation225mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs10Ohm @ 100mA, 5V
Gate charge (Qg) (Max) @ vgs2.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds36 pF @ 5 V
BVSS84LT1G
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