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onsemi BSS84 — Discrete Semiconductors

BSS84 P-Channel Enhancement MOSFET SOT-23 — ANBON | ICBOMS

MPNBSS84
Active

P-CHANNEL ENHANCEMENT MODE MOSFE

$0.4800Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSRoHS Compliant
SeriesSOT-23
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSS84 specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage50 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C130mA (Ta)
Power dissipation225mW (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs8Ohm @ 150mA, 10V
Gate charge (Qg) (Max) @ vgs1.3 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds73 pF @ 25 V