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BSS84 P-Channel Enhancement MOSFET SOT-23 — ANBON | ICBOMS
MPN BSS84
Active
Spot Stock · 24-48h Dispatch
100% Original Sealed
P-CHANNEL ENHANCEMENT MODE MOSFE
In Stock: 81,130 pcs
MOQ: 20 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d)
Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$0.03 / pc
Direct Purchase Ready
Volume Pricing Breaks Confirmed upon quotation
20+ pcs
$0.03
200+ pcs
$0.02
600+ pcs
$0.02
3,000+ pcs
$0.02
9,000+ pcs
$0.02
21,000+ pcs
$0.01
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[SPEC] Essential Parameters Snapshot Full Specifications (15)
Package / Case TO-236-3, SC-59, SOT-23-3
Output / Current 50 V
Full Technical Specifications
15 Parameters| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 50 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 130mA (Ta) |
| Power dissipation | 225mW (Ta) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 8Ohm @ 150mA, 10V |
| Gate charge (Qg) (Max) @ vgs | 1.3 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 73 pF @ 25 V |
Series Sibling Variants
onsemi SOT-23 Series Models
Sibling variants, package options, and speed/density grades in this onsemi semiconductor series. Active Shenzhen warehouse allocation and rapid 24-48h dispatch.
BSS84
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