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onsemi BSS138 — Discrete Semiconductors

BSS138 N-Channel Enhancement MOSFET SOT-23 — ANBON | ICBOMS

MPNBSS138
Active

N-CHANNEL ENHANCEMENT MODE MOSFE

$0.07494Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BSS138 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage50 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C220mA (Ta)
Power dissipation350mW (Ta)
Operating temperature150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1.6V @ 250µA
Rds on (Max) @ id, vgs3Ohm @ 500mA, 10V
Input capacitance (Ciss) (Max) @ vds27 pF @ 25 V