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onsemi BSS123 — Discrete Semiconductors

BSS123 - onsemi

MPNBSS123
Active
$0.08528Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BSS123 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C200mA
Power dissipation350mW (Ta)
Operating temperature150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs5Ohm @ 200mA, 10V
Gate charge (Qg) (Max) @ vgs1.8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds14 pF @ 25 V