The onsemi BD787G is an NPN silicon power transistor rated for 60 V collector-emitter breakdown (Vceo) and 4 A continuous collector current (Ic). Maximum power dissipation is 15 W, which sets the thermal budget for the TO-225AA / TO-126-3 through-hole package — the junction-to-case thermal path must be considered in the heatsink design. The device operates across a -65°C to 150°C junction temperature range, suitable for industrial and automotive environments where wide thermal swings are expected.
Switching and drive characteristics
Transition frequency is 50 MHz, adequate for medium-speed switching applications such as relay drivers, solenoid actuators, and linear regulators. Vce saturation is specified at 2.5 V maximum with 800 mA base current driving 4 A collector current — this saturation voltage determines the on-state conduction loss at full load. Minimum DC current gain (hFE) is 40 at 200 mA collector current with Vce = 3 V, providing sufficient base drive margin for typical switching circuits. Collector cutoff current is 100 µA maximum, a leakage figure that remains stable across the operating temperature range when the junction is below 100°C.
Supplied in Bulk quantity, the BD787G uses the TO-225AA / TO-126-3 through-hole package with the collector tab as the centre pin — the tab is electrically common with the collector, so the heatsink must be isolated or grounded accordingly. The TO-126 footprint is standard for medium-power through-hole transistors; the device mounts into a 0.100-inch pitch three-lead pattern with the tab hole for mechanical retention.
RoHS3 compliant, with no exemptions that would restrict its use in EU-market equipment or require special handling documentation.