Skip to main content
onsemi BC856BWT1G — Discrete Semiconductors

onsemi BC856BWT1G

MPNBC856BWT1G
Active
$0.1600Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BC856BWT1G specifications
ParameterValue
MountingSurface Mount
FET typePNP
Voltage - collector emitter breakdown65 V
Current - collector (Ic)100 mA
Current - collector cutoff15nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce220 @ 2mA, 5V
Power - max150 mW
Frequency100MHz
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseSC-70, SOT-323
Vce saturation (Max) @ ib, ic650mV @ 5mA, 100mA