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onsemi BC556_J35Z — Discrete Semiconductors

onsemi BC556_J35Z

MPNBC556_J35Z
Obsolete
$0.3300Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BC556_J35Z specifications
ParameterValue
MountingThrough Hole
FET typePNP
Voltage - collector emitter breakdown65 V
Current - collector (Ic)100 mA
Current - collector cutoff15nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce110 @ 2mA, 5V
Power - max500 mW
Frequency - transition150MHz
Operating temperature150°C (TJ)
PackageBulk
CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Vce saturation (Max) @ ib, ic650mV @ 5mA, 100mA