Skip to main content
onsemi BAS16TT1G — Discrete Semiconductors

onsemi BAS16TT1G

MPNBAS16TT1G
Active

DIODE GP 100V 200MA SC75 SOT416

$0.2000Ref. price · indicative, final on quote
PackagingSC-75, SOT-416
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BAS16TT1G specifications
ParameterValue
MountingSurface Mount
Voltage - DC reverse (Vr)100 V
Voltage - forward (Vf) (Max) @ if1.25 V @ 150 mA
Current - reverse leakage @ vr1 µA @ 75 V
Current - average rectified200mA
Operating temperature - junction-55°C ~ 150°C
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyStandard
CaseSC-75, SOT-416
Capacitance @ vr,2pF @ 0V, 1MHz
Reverse recovery time6 ns