BAS116LT1G

onsemi

DIODE GEN PURP 75V 200MA SOT23-3

onsemi BAS116LT1G
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MOQ 10 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

BAS116LT1G specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Voltage - DC reverse (Vr)75 V
Voltage - forward (Vf) (Max) @ if1.25 V @ 150 mA
Current - reverse leakage @ vr5 nA @ 75 V
Current - average rectified200mA
Operating temperature - junction-55°C ~ 150°C
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyStandard
CaseTO-236-3, SC-59, SOT-23-3
Capacitance @ vr,2pF @ 0V, 1MHz
Reverse recovery time3 µs
BAS116LT1G
[ALLOC] verified
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