onsemi 2SK536-TB-E
MPN2SK536-TB-E
Obsolete
$1.2000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 50 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 100mA (Ta) |
| Power dissipation | 200mW (Ta) |
| Operating temperature | 125°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Rds on (Max) @ id, vgs | 20Ohm @ 10mA, 10V |
| Input capacitance (Ciss) (Max) @ vds | 15 pF @ 10 V |