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2SK4196LS-1E

onsemi 2SK4196LS-1E

MPN2SK4196LS-1E
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SK4196LS-1E specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5A (Tc)
Power dissipation2W (Ta), 30W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Rds on (Max) @ id, vgs1.56Ohm @ 2.8A, 10V
Gate charge (Qg) (Max) @ vgs14.6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds360 pF @ 30 V