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onsemi 2SK4177-DL-E — Discrete Semiconductors

onsemi 2SK4177-DL-E

MPN2SK4177-DL-E
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SK4177-DL-E specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage1500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2A (Ta)
Power dissipation80W (Tc)
Operating temperature150°C(TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Rds on (Max) @ id, vgs13Ohm @ 1A, 10V
Gate charge (Qg) (Max) @ vgs37.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds380 pF @ 30 V