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onsemi 2SK4066-1E — Discrete Semiconductors

onsemi 2SK4066-1E

MPN2SK4066-1E
Obsolete
$1.9700Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SK4066-1E specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4V, 10V
Current - continuous drain (Id) @ 25°C100A (Ta)
Power dissipation1.65W (Ta), 90W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Rds on (Max) @ id, vgs4.7mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs220 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds12500 pF @ 20 V