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2SK3827
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SK3827 specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4V, 10V
Current - continuous drain (Id) @ 25°C40A (Ta)
Power dissipation1.75W (Ta), 60W (Tc)
Operating temperature150°C(TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id2.6V @ 1mA
Rds on (Max) @ id, vgs34mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs79 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4200 pF @ 20 V