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onsemi 2SK3820-DL-1E — Discrete Semiconductors

onsemi 2SK3820-DL-1E

MPN2SK3820-DL-1E
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SK3820-DL-1E specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4V, 10V
Current - continuous drain (Id) @ 25°C26A (Ta)
Power dissipation1.65W (Ta), 50W (Tc)
Operating temperature150°C(TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Rds on (Max) @ id, vgs60mOhm @ 13A, 10V
Gate charge (Qg) (Max) @ vgs44 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2150 pF @ 20 V