Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 1500 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 4A (Ta) |
| Power dissipation | 3W (Ta), 65W (Tc) |
| Operating temperature | 150°C(TJ) |
| Package | Tray |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-3P-3 Full Pack |
| Rds on (Max) @ id, vgs | 7Ohm @ 2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 80 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 790 pF @ 30 V |