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onsemi 2SK3666-4-TB-E — Discrete Semiconductors

onsemi 2SK3666-4-TB-E

MPN2SK3666-4-TB-E
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SK3666-4-TB-E specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Voltage - breakdown (V(BR)GSS)30 V
Voltage - cutoff (VGS off) @ id180 mV @ 1 µA
Current drain (Id) - max10 mA
Current - drain (Idss) @ vds (Vgs=0)2.5 mA @ 10 V
Power - max200 mW
Operating temperature150°C(TJ)
PackageTape & Reel (TR)
CaseTO-236-3, SC-59, SOT-23-3
Resistance - RDS200 Ohms
Input capacitance (Ciss) (Max) @ vds4pF @ 10V