onsemi 2SJ646-TL-E
MPN2SJ646-TL-E
End of Life
2SJ646 - P-CHANNEL SILICON MOSFE
$0.2Ref. price · indicative, final on quote
PackagingTO-251-3 Short Leads, IPak, TO-251AA
RoHSNot applicable
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | P-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4V, 10V |
| Current - continuous drain (Id) @ 25°C | 8A |
| Power dissipation | 1W (Ta), 15W (Tc) |
| Operating temperature | 150°C |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Vgs(th) (Max) @ id | 2.6V @ 1mA |
| Rds on (Max) @ id, vgs | 75mOhm @ 4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 11 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 510 pF @ 10 V |