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onsemi 2SC5706-H — Discrete Semiconductors

onsemi 2SC5706-H

MPN2SC5706-H
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SC5706-H specifications
ParameterValue
MountingThrough Hole
FET typeNPN
Voltage - collector emitter breakdown50 V
Current - collector (Ic)5 A
Current - collector cutoff1µA (ICBO)
DC current gain (hFE) (Min) @ ic, vce200 @ 500mA, 2V
Power - max800 mW
Frequency - transition400MHz
Operating temperature150°C(TJ)
PackageBulk
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vce saturation (Max) @ ib, ic240mV @ 100mA, 2A