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onsemi 2SC3651-TD-E — Discrete Semiconductors

onsemi 2SC3651-TD-E

MPN2SC3651-TD-E
Active

2SC3651 - NPN EPITAXIAL PLANAR S

$0.1900Ref. price · indicative, final on quote
Series*
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SC3651-TD-E specifications
ParameterValue
Series*
MountingSurface Mount
FET typeNPN
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce500 @ 10mA, 5V
Frequency150MHz
Operating temperature150°C (TJ)
PackageBulk
CaseTO-243AA
Vce saturation (Max) @ ib, ic500mV @ 2mA, 100mA