Skip to main content
onsemi 2SC3649T-TD-H — Discrete Semiconductors

onsemi 2SC3649T-TD-H

MPN2SC3649T-TD-H
Obsolete
$0.7500Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SC3649T-TD-H specifications
ParameterValue
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown160 V
Current - collector (Ic)1.5 A
Current - collector cutoff1µA (ICBO)
DC current gain (hFE) (Min) @ ic, vce200 @ 100mA, 5V
Power - max500 mW
Frequency120MHz
Operating temperature150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-243AA
Vce saturation (Max) @ ib, ic450mV @ 50mA, 500mA