onsemi 2SC3649S-TD-H
MPN2SC3649S-TD-H
Obsolete
$1.2000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| FET type | NPN |
| Voltage - collector emitter breakdown | 160 V |
| Current - collector (Ic) | 1.5 A |
| Current - collector cutoff | 1µA (ICBO) |
| DC current gain (hFE) (Min) @ ic, vce | 140 @ 100mA, 5V |
| Power - max | 500 mW |
| Frequency - transition | 120MHz |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Case | TO-243AA |
| Vce saturation (Max) @ ib, ic | 450mV @ 50mA, 500mA |