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onsemi 2SC3646T-TD-E — Discrete Semiconductors

onsemi 2SC3646T-TD-E

MPN2SC3646T-TD-E
Active
$0.6300Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SC3646T-TD-E specifications
ParameterValue
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown100 V
Current - collector (Ic)1 A
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce100 @ 100mA, 5V
Power - max500 mW
Frequency - transition120MHz
Operating temperature150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-243AA
Vce saturation (Max) @ ib, ic400mV @ 40mA, 400mA